Display apparatus and manufacturing method thereof

ABSTRACT

A display apparatus including a panel substrate, a TFT panel part including a plurality of connection electrodes disposed on an upper surface of the panel substrate, and a light emitting diode part disposed on the TFT panel part and including a plurality of light emitting modules adjacent to each other, in which each of the light emitting modules includes a plurality of pixels, each of the pixels includes three sub-pixels, and the three sub-pixels include blue light emitting diodes, green light emitting diodes, and red light emitting diodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.16/684,422, filed on Nov. 14, 2019, which is a Continuation of U.S.patent application Ser. No. 15/997,620, filed on Jun. 4, 2018, which isa Continuation of U.S. patent application Ser. No. 15/443,132, filed onFeb. 27, 2017, now issued as U.S. Pat. No. 9,997,688 on Jun. 12, 2018,which claims the benefit of U.S. Provisional Patent Application No.62/300,249, filed on Feb. 26, 2016, and U.S. Provisional PatentApplication No. 62/379,501, filed on Aug. 25, 2016, each of which arehereby incorporated by reference for all purposes as if fully set forthherein.

BACKGROUND Field

The invention relates generally to a display apparatus and a method ofmanufacturing the same, and, more particularly, to a display apparatususing micro-light emitting diodes and a method of manufacturing thesame.

Discussion of the Background

A light emitting diode refers to an inorganic semiconductor device thatemits light through recombination of electrons and holes. Light emittingdiodes have been recently used in various fields including displays,automobile lamps, general lighting, and the like. A light emitting diodehas various advantages such as long lifespan, low power consumption, andrapid response. As a result, a light emitting device using a lightemitting diode is used as a light source in various fields.

Recently, smart TVs or monitors display colors using a thin filmtransistor liquid crystal display (TFT LCD) panel. Such color displaystend to use light emitting diodes (LEDs) as a light source for abacklight unit to display the color. In addition, a display apparatus isoften manufactured using organic light emitting diodes (OLEDs).

In a TFT-LCD, since one LED is used as a light source for many pixels, abacklight light source must be kept in a turned-on state. As a result,the TFT-LCD suffers from constant power consumption regardless ofbrightness of a displayed screen. On the other hand, although powerconsumption of an OLED has been continuously reduced due to the ongoingdevelopment of the technology, the OLED still has much higher powerconsumption than LEDs formed of inorganic semiconductors. Thus OLEDshave low power efficiency.

Moreover, a passive matrix (PM) drive type OLED can suffer fromdeterioration in response speed upon pulse amplitude modulation (PAM) ofthe OLED having large capacitance, and can suffer from deterioration inlifespan upon high current driving through pulse width modulation (PWM)for realizing a low duty ratio. Moreover, an AM driving type OLEDrequires connection of TFTs for each pixel, thereby causing increase inmanufacturing costs and non-uniform brightness according tocharacteristics of TFTs.

SUMMARY

One or more exemplary embodiments of the invention provide a displayapparatus using micro-light emitting diodes having low powerconsumption, and the display apparatus is usable as a wearableapparatus, a smartphone or a TV, and a method of manufacturing the same.

According to one aspect of the invention, a display apparatus includes aplurality of light emitting diode modules each having a plurality oflight emitting diodes regularly arranged therein, and a substrateincluding a drive unit configured to drive the plurality of lightemitting diodes. The substrate is coupled to the plurality of lightemitting diode modules such that the plurality of light emitting diodemodules and substrate oppose each other, and the drive unit iselectrically connected to the plurality of light emitting diodes.

The drive unit may include a plurality of TFTs and the light emittingdiodes may be electrically connected to one of the plurality of TFTs,respectively.

At least some of the plurality of light emitting diode modules may havea smaller size than the substrate and may be connected to the substrate.

At least some of the plurality of light emitting diode modules mayinclude a support substrate, a plurality of blue light emitting diodesarranged on an upper surface of the support substrate, a plurality ofgreen light emitting diodes arranged on the upper surface of the supportsubstrate adjacent to the plurality of blue light emitting diodes, and aplurality of red light emitting diodes arranged on the upper surface ofthe support substrate adjacent to either the plurality of blue lightemitting diodes or the plurality of green light emitting diodes.

At least some of the plurality of blue light emitting diodes, theplurality of green light emitting diodes and the plurality of red lightemitting diodes may include an n-type semiconductor layer, a p-typesemiconductor layer, an active layer interposed between the n-typesemiconductor layer and the p-type semiconductor layer, an n-typeelectrode coupled to the n-type semiconductor layer, a p-type electrodecoupled to the p-type semiconductor layer, and a wall surrounding thep-type electrode.

At least some of the plurality of light emitting diode modules mayinclude a support substrate, a plurality of light emitting diodesarranged on an upper surface of the support substrate and emitting bluelight or UV light, and a phosphor layer disposed on at least some of theplurality of light emitting diodes and emitting at least one of bluelight, green light and red light through wavelength conversion of atleast a part of light emitted from the light emitting diodes.

The display apparatus may further include an anisotropic conductive filmelectrically connecting the plurality of light emitting diode modules tothe substrate.

The plurality of light emitting diode modules may include a plurality ofsubpixels at least some of which are composed of at least one lightemitting diode and regularly arranged in a matrix.

At least some of the light emitting diode modules may include anelectrode substrate including a first electrode terminal and a secondelectrode terminal electrically insulated from each other, a pluralityof light emitting diodes regularly arranged on the electrode substrateand electrically connected to the first and second electrode terminals,and a plurality of blocking portions surrounding the plurality of lightemitting diodes, the plurality of blocking portions being separated fromside surfaces of the plurality of light emitting diodes, and the driveunit may be electrically connected to the plurality of light emittingdiodes through the first and second electrode terminals.

At least some of the plurality of light emitting diodes may include alight emitting structure including an n-type semiconductor layer, ap-type semiconductor layer and an active layer interposed between then-type semiconductor layer and the p-type semiconductor layer, an n-typeelectrode disposed at a lower side of the light emitting structure andelectrically connected to the n-type semiconductor layer, and a p-typeelectrode disposed at the lower side of the light emitting structure andelectrically connected to the p-type semiconductor layer, in which then-type electrode is electrically connected to the first electrodeterminal and the p-type electrode is electrically connected to thesecond electrode terminal.

At least some of the plurality of light emitting diodes may furtherinclude a phosphor layer disposed on the light emitting structure andemitting light through wavelength conversion of light emitted from thelight emitting structure.

At least some of the plurality of light emitting diodes may include alight emitting structure disposed on the first electrode terminal andincluding a first semiconductor layer, a second semiconductor layerdisposed on an upper surface of the first semiconductor layer, and anactive layer interposed between the first semiconductor layer and thesecond semiconductor layer, in which the first semiconductor layer iselectrically connected to the first electrode terminal and the secondsemiconductor layer is electrically connected to the second electrodeterminal via a wire.

According to another aspect of the invention, a method of manufacturinga display apparatus includes forming a plurality of light emitting diodemodules having a plurality of light emitting diodes regularly arrangedtherein, forming a TFT panel part having a plurality of TFTs regularlyarranged thereon and configured to drive the light emitting diodes, andcoupling at least one of the plurality of light emitting diode modulesto the TFT panel part such that the at least one of the plurality oflight emitting diode modules and the TFT panel part oppose each otherand such that the light emitting diodes are respectively electricallyconnected to the one of the TFTs.

The step of coupling at least one of the plurality of light emittingdiode modules to the TFT panel part may include attaching an anisotropicconductive film to one surface of the TFT panel part and coupling atleast one of the light emitting diode modules to the anisotropicconductive film, and may further include applying pressure to at leastone of the light emitting diode modules placed on the anisotropicconductive film in a direction towards the TFT panel part.

The step of coupling at least one of the plurality of light emittingdiode modules to the TFT panel part may further include applyingpressure to the at least one of the light emitting diode modules placedon the anisotropic conductive film in a direction towards the TFT panelpart.

The manufacturing method may further include coupling at least one otherlight emitting diode module of the plurality of light emitting diodemodules to the TFT panel part such that the at least one other lightemitting diode module and the TFT panel part oppose each other.

According to another aspect of the invention, a method of manufacturinga display apparatus includes forming a plurality of light emitting diodemodules having a plurality of light emitting diodes regularly arrangedtherein, forming a drive substrate including a drive unit driving theplurality of light emitting diodes, and coupling at least one of theplurality of light emitting diode modules to the drive substrate at afirst location such that the at least one of is the plurality of lightemitting diode modules and the drive substrate oppose each other and theplurality of light emitting diodes is electrically connected to thedrive substrate.

The manufacturing method may further include coupling at least one otherlight emitting diode module of the plurality of light emitting diodemodules to the drive substrate such that the at least one other lightemitting diode module and the drive substrate oppose each other. The atleast one other light emitting diode module among the plurality of lightemitting diode modules may be coupled to the drive substrate at a secondlocation adjacent to the first location.

According to another aspect of the invention, a light emitting diodeapparatus includes a substrate, a plurality of light emitting diodesregularly arranged on the substrate and configured to emit ultraviolet(UV) light, the light emitting diodes including a first sub-lightemitting diode, a second sub-light emitting diode, and a third sub-lightemitting diode, a plurality of phosphor layers disposed on the lightemitting diodes and to convert the wavelength of light emitted from thelight emitting diodes, the phosphor layers including a first phosphorlayer, a second phosphor layer, and a third phosphor layer disposed onthe first sub-light emitting diode, the second sub-light emitting diode,and the third sub-light emitting diode, respectively, and a control unitconfigured to supply power to the light emitting diodes, in which thephosphor layers are spaced apart from each other by a blocking region,and the control unit is configured to cause at least a portion of thelight emitting diodes to emit light.

The light emitting diode apparatus may further include a transparentelectrode disposed on at least one of the sub-light emitting diodes totransmit light therethrough.

The blocking region may be spaced apart from side surfaces of the lightemitting diodes.

The blocking region may surround one of the sub-light emitting diodes.

The light emitting diode apparatus may further include an insulationlayer surrounding one of the sub-light emitting diodes.

The light emitting diodes may further include a fourth sub-lightemitting diode, and the transparent electrode is disposed on the fourthsub-light emitting diode to transmit light emitted from the fourthsub-light emitting diode therethrough.

The light emitting diode apparatus may further include a protectivelayer disposed on at least one of the phosphor layers, in which theprotective layer is directly exposed to the outside.

The light emitting diode apparatus may further include an electrodesubstrate and a conductor layer penetrating the electrode substrate.

At least one of the sub-light emitting diodes may include a p-typesemiconductor layer, and a p-type electrode electrically contacting thep-type semiconductor layer through a via hole.

The control unit may be configured to cause only the portion of thelight emitting diodes, among the light emitting diodes, to emit light.

According to another aspect of the invention, a light emitting diodeapparatus includes a substrate; a plurality of light emitting diodesregularly arranged on the substrate, the light emitting diodes includinga first sub-light emitting diode and a second sub-light emitting diode,a plurality of phosphor layers disposed on the light emitting diodes andto convert the wavelength of light emitted from the light emittingdiodes, the phosphor layers including a first phosphor layer and asecond phosphor layer disposed on the first sub-light emitting diode andthe second sub-light emitting diode, respectively, and a control unitconfigured to supply power to the light emitting diodes, in which thephosphor layers are spaced apart from each other by a is blockingregion, and the control unit is configured to cause at least a portionof the light emitting diodes to emit light.

According to another aspect of the invention, a display apparatusincludes a panel substrate including a TFT drive circuit for activematrix driving, a plurality of light emitting diodes, and an anisotropicconductive film electrically connecting the light emitting diodes to thepanel substrate, in which the anisotropic conductive film includes anadhesive organic insulation material and conductive particles dispersedin the adhesive organic insulation material.

The display apparatus may further include a support substrate disposedon the light emitting diodes.

The display apparatus may further include a transparent electrodedisposed between the support substrate and the light emitting diode.

The display apparatus may further include a blocking portion disposedbetween the light emitting diodes to block light emitted from one of thelight emitting diodes being directed towards an adjacent one of thelight emitting diodes.

The display apparatus may further include a support substrate disposedon the light emitting diodes, in which the blocking portion may bedisposed on the support substrate.

The display apparatus may further include a transparent electrodedisposed between the support substrate and the light emitting diode, inwhich the blocking portion may cover a portion of the transparentelectrode.

The display apparatus may further include light emitting diode modulesdisposed on the panel substrate, in which each of the light emittingdiode modules may include a support substrate on which the lightemitting diodes are arranged.

Each of the light emitting diode modules may be disposed on theanisotropic conductive film.

Each of the light emitting diode modules may include pixels, each pixelincluding at least three sub-pixels configured to emit light havingdifferent colors.

Each of the light emitting diodes may include an n-type semiconductorlayer, a p-type semiconductor layer, an active layer interposed betweenthe n-type semiconductor layer and the p-type semiconductor layer, ann-type electrode coupled to the n-type semiconductor layer, and a p-typeelectrode coupled to the p-type semiconductor layer.

The display apparatus may further include an insulation layersurrounding the light emitting diode.

The insulation layer may cover a portion of an upper surface of thelight emitting diode.

The display apparatus may further include a first connection electrodedisposed on the insulation layer and electrically connected to the lightemitting diode, and a second connection electrode disposed on the panelsubstrate and electrically connected to the TFT drive circuit, in whichthe anisotropic conductive film may connect the first connectionelectrode to the second connection electrode.

The conductive particles may be uniformly dispersed in the adhesiveorganic insulation material.

According to another aspect of the invention, a method of manufacturinga display apparatus includes forming a plurality of light emittingdiodes, forming a panel substrate including a TFT drive circuit foractive matrix driving, forming an anisotropic conductive film on thepanel substrate, and coupling the plurality of light emitting diodes tothe panel substrate is with the anisotropic conductive film.

The method may further include forming a plurality of light emittingdiode modules, each of the light emitting diode modules including asupport substrate on which the light emitting diodes are regularlyarranged.

Each of the light emitting diode modules may further include firstconnection electrodes connected to the light emitting diodes,respectively, and the panel substrate may include second connectionelectrodes and the anisotropic conductive film electrically connectingthe first connection electrodes to the second connection electrodes.

The method may further include forming insulation layers surrounding thelight emitting diodes, respectively, in which the first connectionelectrodes may be formed on the insulation layers.

Each of the light emitting diode modules may include pixels, each pixelincluding at least three sub-pixels configured to emit light havingdifferent colors.

Each of the light emitting diodes may include an n-type semiconductorlayer, a p-type semiconductor layer, an active layer interposed betweenthe n-type semiconductor layer and the p-type semiconductor layer, ann-type electrode coupled to the n-type semiconductor layer, and a p-typeelectrode coupled to the p-type semiconductor layer.

Accordingly, in various exemplary embodiments, the display apparatusemploys micro-light emitting diodes formed of nitride semiconductors;and, a light emitting diode part including a plurality of micro-lightemitting diodes is formed as a unit module. Thus, the light emittingdiode part can be more conveniently coupled to a TFT panel part.

In addition, in various exemplary embodiments, the light emitting diodepart is formed in a predetermined size such that a desired number oflight emitting diodes parts can be is coupled to TFT panel parts havingvarious sizes. Thus, the display apparatus can be more convenientlymanufactured in various sizes.

Furthermore, since the light emitting diode parts are constituted as aplurality of modules in some embodiments of the invention, any one ofthe light emitting diodes can be replaced by a new light emitting diodewhen the corresponding light emitting diode is defective, therebyproviding a display apparatus having an improved display quality.Furthermore, since inspection of the light emitting diodes can beperformed in a module unit in some embodiments of the invention, it ispossible to reduce the rate at which final products in manufacture ofthe display apparatus are defective.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosed technology, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the disclosed technology, and together with thedescription serve to describe the principles of the disclosedtechnology.

FIG. 1 is a plan view of a first embodiment of a display apparatusconstructed according to the principles of the invention.

FIG. 2 is a cross sectional view of the display apparatus of FIG. 1.

FIG. 3 is a partially exploded plan view of the display apparatus ofFIG. 1 illustrating a step in a method of manufacturing the displayapparatus according to the principles of the invention.

FIG. 4A and FIG. 4B are cross sectional views of the display apparatusof FIG. 1 illustrating steps in a process for coupling light emittingdiode modules of the display apparatus is to a TFT panel part in anexemplary method of manufacturing the display apparatus according to theprinciples of the invention.

FIG. 5 is a plan view of a second embodiment of a display apparatusconstructed according to the principles of the invention.

FIG. 6 is a cross sectional view of the display apparatus of FIG. 5.

FIG. 7 is a cross sectional view of a third embodiment of a displayapparatus constructed according to the principles of the invention.

FIG. 8 is a cross sectional view of the display apparatus of FIG. 7illustrating a step in a process for coupling light emitting diodemodules of the display apparatus to a drive substrate in an exemplarymethod of manufacturing the display apparatus according to theprinciples of the invention.

FIG. 9 is a cross sectional view of a fourth embodiment of a displayapparatus constructed according to the principles of the invention.

DETAILED DESCRIPTION OF ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or is features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. The regions illustrated in the drawings are schematic innature and their shapes are not intended to illustrate the actual shapeof a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, is should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

Hereinafter, various exemplary embodiments of the invention will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a plan view of a first embodiment of a display apparatusconstructed according to the principles of the invention. FIG. 2 is across sectional view of the display apparatus of FIG. 1.

Referring to FIG. 1 and FIG. 2, the display apparatus 100 according tothe first exemplary embodiment includes a light emitting diode part 110,a TFT panel part 130, and an anisotropic conductive film 150.

The light emitting diode part 110 includes light emitting diodes 112, asupport substrate 114, transparent electrodes 116, a blocking portion118, an insulation layer 120, and first connection electrodes 122. Asshown in FIG. 2, in the light emitting diode part 110, the transparentelectrode 116, the light emitting diode 112, the blocking portion 118,the insulation layer 120 and the first connection electrode 122 areformed in a generally vertical structure on the support substrate 114 toconstitute one subpixel (SP) in the display apparatus 100, and the lightemitting diode part 110 may be composed of a plurality of subpixels SP.

The light emitting diode part 110 may constitute a plurality of lightemitting diode modules M1, M2, M3, M4, as shown in FIG. 1. Threesubpixels SP constitute one pixel P and each of the light emitting diodemodules M1, M2, M3, M4 is constituted by a plurality of pixels P. Thatis, the light emitting diode module includes a plurality of pixels.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, which are regularly arranged on the support substrate 114.For example, the plural light emitting diodes 112 may be arranged atconstant intervals in a “checkerboard” matrix, as shown in FIG. 1, orother type of matrix form. The plurality of the light emitting diodes112 may include a plurality of blue light emitting diodes 112 a emittingblue light, a plurality of green light emitting diodes 112 b emittinggreen light, and a plurality of red light emitting diodes 112 c emittingred light. The plurality of blue light emitting diodes 112 a, theplurality of green light emitting diodes 112 b and the plurality of redlight emitting diodes 112 c are alternately arranged so as to beadjacent to one another.

In the display apparatus 100, the light emitting diode part 110 may bedriven by power applied from an exterior power source and an image canbe reproduced through an on-off combination of the light emitting diodes112 in the light emitting diode part 110 without using a separate LCD.

Referring to FIG. 2, each of the light emitting diodes 112 includes ann-type semiconductor layer 23, an active layer 25, a p-typesemiconductor layer 27, an n-type electrode 31, a p-type electrode 33,and a wall 35.

The n-type semiconductor layer 23, the active layer 25 and the p-typesemiconductor layer 27 may include Group III-V based compoundsemiconductors. By way of example, the n-type semiconductor layer 23,the active layer 25 and the p-type semiconductor layer 27 may includenitride semiconductors such as (Al, Ga, In)N. Locations of the n-typesemiconductor layer 23 and the p-type semiconductor layer 27 can beinterchanged.

The n-type semiconductor layer 23 may include an n-type dopant (forexample, Si) and the p-type semiconductor layer 27 may include a p-typedopant (for example, Mg). The active layer 25 is interposed between then-type semiconductor layer 23 and the p-type is semiconductor layer 27.The active layer 25 may have a multi-quantum well (MQW) structure andthe composition of the active layer 25 may be determined so as to emitlight having a desired peak wavelength.

In addition, the light emitting structure including the n-typesemiconductor layer 23, the active layer 25 and the p-type semiconductorlayer 27 may be formed similar to a vertical type light emitting diode112. In this structure, the n-type electrode 31 may be formed on anouter surface of the n-type semiconductor layer 23 and the p-typeelectrode 33 may be formed on an outer surface of the p-typesemiconductor layer 27.

Furthermore, as shown in FIG. 2, a bonding portion S may be formedbetween the p-type electrode 33 and the transparent electrode 116 inorder to couple the light emitting diode 112 similar to the verticaltype light emitting diode to the transparent electrode 116 formed on thesupport substrate 114. Here, the wall 35 may be formed on the lightemitting diode 112 to prevent the bonding portion S from escaping from aspace between the p-type electrode 33 and the transparent electrode 116.

The wall 35 may be formed to cover a portion of the p-type electrode 33such that the p-type electrode 33 can be exposed on the p-typesemiconductor layer 27, and may be composed of a plurality of layers, asshown in the drawings. The wall 35 may include a first layer and asecond layer, and may be formed by forming the first layer including SiNon the p-type semiconductor layer 27 so as to cover a portion of thep-type electrode 33, followed by forming the second layer including SiO₂on the first layer. The second layer may have a greater thickness and asmaller width than the first layer.

The support substrate 114 is a substrate on which the plurality of lightemitting diodes 112 will be mounted, and may be an insulation substrate,a conductive substrate, or a is printed circuit board. By way ofexample, the support substrate 114 may be at least one of a sapphiresubstrate, a gallium nitride substrate, a glass substrate, a siliconcarbide substrate, a silicon substrate, a metal substrate, and a ceramicsubstrate. The support substrate 114 may be a transparent substrate inorder to allow light emitted from the light emitting diodes 112 to passtherethrough. By way of example, the support substrate 114 may be formedas a flexible glass substrate having a certain thickness.

The transparent electrode 116 may be formed on the support substrate 114and may be electrically connected to the p-type electrode 33 of thelight emitting diode 112. A plurality of transparent electrodes 116 maybe formed on the support substrate 114 and may be coupled to theplurality of light emitting diodes 112, respectively. Alternatively, theplurality of light emitting diodes 112 may be coupled to one transparentelectrode 116. In addition, the transparent electrodes 116 may beseparated from each other on the support substrate 114. The transparentelectrodes 116 may be formed of indium tin oxide (ITO) and the like.

The blocking portion 118 is formed on the support substrate 114 and maybe provided in plural. The blocking portion 118 prevents light emittedfrom a certain light emitting diode from being directed towards otherlight emitting diodes 112 adjacent thereto when light emitted from thelight emitting diodes 112 is emitted to the outside through thetransparent electrodes 116. Accordingly, the blocking portion 118 may beformed between the transparent electrodes 116 separated from each otherand may be formed to cover a portion of each of the transparentelectrodes 116. The blocking portion 118 is formed of aluminum (Al) orchromium (Cr).

The insulation layer 120 may surround the light emitting diode 112 andcover an exposed surface of a connecting plane between the lightemitting diode 112 and the transparent is electrode 116 while coveringthe transparent electrode 116. In the structure wherein the insulationlayer 120 surrounds the light emitting diode 112, the n-typesemiconductor layer 23 and the n-type electrode 31 of the light emittingdiode 112 can be exposed through the insulation layer 120.

The first connection electrode 122 covers the insulation layer 120 andmay also cover the n-type semiconductor layer 23 and the n-typeelectrode 31 not covered by the insulation layer 120. Accordingly, thefirst connection electrode 122 may be electrically connected to then-type semiconductor layer 23.

The TFT panel part 130 includes a panel substrate 132 and secondconnection electrodes 134, and is coupled to the light emitting diodepart 110 to supply power to the light emitting diode part 110. The TFTpanel part 130 may control power supplied to the light emitting diodepart 110 to allow only some of the light emitting diodes 112 in thelight emitting diode part 110 to emit light.

The panel substrate 132 has a TFT drive circuit therein. The TFT drivecircuit may be a circuit for driving an active matrix (AM) or a circuitfor driving a passive matrix (PM).

The second connection electrodes 134 may be electrically connected tothe TFT drive circuit of the panel substrate 132 and to the firstconnection electrodes 122 of the light emitting diode part 110. In thisstructure, power supplied through the TFT drive circuit can be suppliedto each of the light emitting diodes 112 through the first and secondconnection electrodes 122, 134. The second connection electrodes 134 maybe covered by a separate protective layer, which may include, forexample, SiN_(x).

The anisotropic conductive film 150 serves to electrically connect thelight emitting diode part 110 to the TFT panel part 130. The anisotropicconductive film 150 may is include an adhesive organic insulationmaterial and may contain conductive particles uniformly dispersedtherein to achieve electrical connection. The anisotropic conductivefilm 150 exhibits conductivity in the direction of its thickness andinsulating properties in the orthogonal planar direction of its widthand length. In addition, the anisotropic conductive film 150 exhibitsadhesive properties. Thus, the anisotropic conductive film 150 may beused to bond the light emitting diode part 110 to the TFT panel part 130such that the light emitting diode part 110 can be electricallyconnected to the TFT panel part 130 therethrough. Particularly, theanisotropic conductive film 150 may be advantageously used to connectITO electrodes which are difficult to solder at high temperature.

As such, in the structure wherein the light emitting diode part 110 iscoupled to the TFT panel part 130 via the anisotropic conductive film150, the first connection electrodes 122 of the light emitting diodepart 110 may be electrically connected to the second connectionelectrodes 134 of the TFT panel part 130 via an electrode connectionportion 152.

FIG. 3 is a partially exploded plan view of the display apparatus ofFIG. 1 illustrating a step in a method of manufacturing the displayapparatus according to the principles of the invention. FIG. 4A and FIG.4B are cross sectional views of the display apparatus of FIG. 1illustrating steps in a process for coupling light emitting diodemodules of the display apparatus to a TFT panel part in an exemplarymethod of manufacturing the display apparatus according to theprinciples of the invention.

Referring to FIG. 3, a plurality of light emitting diode modules M1, M2,M3, M4 may be coupled to one TFT panel part 130 having a large area.FIG. 3 shows a process for coupling a fourth light emitting diode moduleM4 to the large TFT panel part 130 to which first through third lightemitting diode modules M1, M2, M3 are coupled.

As described above, the TFT panel part 130 includes a plurality ofsecond connection electrodes 134 formed on an upper surface of the panelsubstrate 132, which has a plurality of TFT drive circuits formedtherein. Since the TFT drive circuits control power supply to the lightemitting diode part 110, the TFT circuits suffer from less failure evenin the structure wherein the TFT panel part 130 has a large area.

As shown in FIG. 4A, the anisotropic conductive film 150 is formed on anupper surface of the TFT panel part 130 and each of the plurality oflight emitting diode modules M1, M2, M3, M4 is placed on the anisotropicconductive film 150 to be coupled to the TFT panel part 130. Here, eachof the light emitting diode modules M1, M2, M3, M4 may be coupled to aportion of the large TFT panel part 130 and the light emitting diodemodules M1, M2, M3, M4 may be adjacent to each other on the TFT panelpart 130.

As described above, the anisotropic conductive film 150 may include anadhesive organic material and exhibits conductivity in the direction ofits thickness. In addition, the anisotropic conductive film 150 may becompressed to exhibit conductivity in the thickness direction thereofupon application of pressure thereto. Thus, as shown in FIG. 4B, whenpressure is applied to the light emitting diode modules M1, M2, M3, M4placed on the anisotropic conductive film 150, the light emitting diodemodules M1, M2, M3, M4 can be coupled to the TFT panel part 130.

In this way, when pressure is applied to the light emitting diodemodules M1, M2, M3, M4 placed on the anisotropic conductive film 150,each of the plurality of light emitting diode modules M1, M2, M3, M4 canbe coupled to the large TFT panel part 130.

FIG. 5 is a plan view of a second embodiment of a display apparatusconstructed according to the principles of the invention. FIG. 6 is across sectional view of the display is apparatus of FIG. 5.

Referring to FIG. 5 and FIG. 6, the display apparatus 100 according tothe second exemplary embodiment includes a light emitting diode part110, a TFT panel part 130, and an anisotropic conductive film 150. Thelight emitting diode part 110 includes light emitting diodes, a supportsubstrate 114, a transparent electrode 116, a blocking portion 118, aninsulation layer 120, and first connection electrodes 122. The TFT panelpart 130 includes a panel substrate 132 and second connection electrodes134. Hereinafter, descriptions of the same components as previouslydescribed will be omitted to avoid redundancy.

In FIG. 5, blue light emitting diodes 112 a are used as the lightemitting diodes. Referring to FIG. 5, a plurality of blue light emittingdiodes 112 a is regularly arranged on the support substrate 114.Accordingly, light emitting diode modules M1, M2, M3, M4 each includingthe plurality of blue light emitting diodes 112 a arranged thereon maybe formed. A plurality of light emitting diode modules M1, M2, M3, M4may thus be formed, as shown in FIG. 5.

With this structure, the plurality of light emitting diode modules M1,M2, M3, M4 may be coupled to one TFT panel part 130 having a large areaso as to be adjacent to one another. Here, each of light emitting diodemodules M1, M2, M3, M4 may be coupled to the TFT panel part by theanisotropic conductive film 150.

Further, since each of the light emitting diode modules M1, M2, M3, M4includes the blue light emitting diodes 112 a arranged thereon, thedisplay apparatus 100 may further include a phosphor layer 126 to emitblue light, green light and red light.

The phosphor layer 126 may emit light through conversion of blue lightemitted from the blue light emitting diodes 112 a into green light orred light. To this end, the phosphor is layer 126 may be formed on theupper surface of the support substrate 114 and may include a greenphosphor layer 126 b, a red phosphor layer 126 c, and a transparentlayer 126 e. In addition, a blocking layer 126 d may be formed betweenthe green phosphor layer 126 b, the red phosphor layer 126 c and thetransparent layer 126 e. The green phosphor layer 126 b, the redphosphor layer 126 c and the transparent layer 126 e may be alternatelyarranged to be separated from one another by at least a predeterminedminimum distance. In addition, the blocking layer 126 d may be formedbetween the green phosphor layer 126 b, the red phosphor layer 126 c andthe transparent layer 126 e. The green phosphor layer 126 b, the redphosphor layer 126 c and the transparent layer 126 e may be alternatelyarranged to be adjacent to one another or to be separated from oneanother by at least a predetermined minimum distance.

The green phosphor layer 126 b converts the wavelength of blue lightemitted from the light emitting diodes 112 to emit green light, and thered phosphor layer 126 c converts the wavelength of blue light emittedfrom the blue light emitting diodes 112 a to emit red light. Inaddition, the transparent layer 126 e is placed near the green phosphorlayer 126 b and the red phosphor layer 126 c to allow blue light emittedfrom the light emitting diodes 112 a to pass therethrough. Accordingly,red light, green light and blue light can be emitted through thephosphor layer 126.

A protective substrate 128 may be formed on an upper surface of thephosphor layer 126. The protective substrate 128 can protect thephosphor layer 126 from an external environment by preventing thephosphor layer 126 from being directly exposed to the outside. Like thesupport substrate 114, the protective substrate 128 may be formed of atransparent material.

FIG. 7 is a cross sectional view of a third embodiment of a displayapparatus is constructed according to the principles of the invention.

Referring to FIG. 7, the depicted display apparatus 100 includes a lightemitting diode part 110 and a drive substrate 160. Descriptions of thesame components as previously described will hereinafter be omitted toavoid redundancy.

The light emitting diode part 110 includes light emitting diodes 112, anelectrode substrate 115 and a blocking portion 118, and may furtherinclude a protective substrate 128. As shown in FIG. 7, a plurality ofthe light emitting diodes 112 may be disposed on an upper surface of theelectrode substrate 115 and the blocking portion 118 may be disposedbetween the light emitting diodes 112. Accordingly, a region formed bythe blocking portion 118 may be each subpixel of the display apparatus100.

The light emitting diode part 110 may include a plurality of lightemitting diodes 112, which are regularly arranged on the electrodesubstrate 115. The light emitting diodes 112 can emit blue light orultraviolet (UV) light. To this end, each of the light emitting diodes112 includes a light emitting structure including an n-typesemiconductor layer 23, a p-type semiconductor layer 27 and an activelayer 25 interposed between the n-type semiconductor layer 23 and thep-type semiconductor layer 27, and may further include a phosphor layer126 disposed on an upper surface of the light emitting structure.Further, an n-type electrode 31 and a p-type electrode 33 may bedisposed on a lower surface of the light emitting structure.

Since each of the light emitting diodes 112 includes the n-typesemiconductor layer 23 disposed at the lower side thereof, the n-typeelectrode 31 directly electrically contacts the n-type semiconductorlayer 23 and the p-type electrode 33 electrically contacts the p-typesemiconductor layer 27 through a via-hole.

In addition, the phosphor layer 126 is disposed on the light emittingstructure. The phosphor layer 126 serves to convert the wavelengths oflight emitted from the light emitting diodes 112 and various kinds ofphosphor layers 126 may be used. The light emitting diodes 112 emit bluelight or UV light and the phosphor layer 126 may include one of a bluephosphor layer, a green phosphor layer and a red phosphor layer.

That is, when light to be emitted from a subpixel is red light and thelight emitting diodes 112 are the blue light emitting diodes or the UVlight emitting diodes, the phosphor layer 126 is the red phosphor layer.In addition, when light to be emitted from a subpixel is green light andthe light emitting diodes 112 are the blue light emitting diodes or theUV light emitting diodes, the phosphor layer 126 is the green phosphorlayer. In addition, when the UV light emitting diodes are used and lightto be emitted from a subpixel is blue light, the phosphor layer 126 maybe the blue phosphor layer.

Here, the electrode substrate 115 is a substrate on which the pluralityof the light emitting diodes 112 is mounted, and may be formed with afirst electrode terminal 115 a and a second electrode terminal 115 b.The electrode substrate 115 is generally formed of an insulationmaterial, and the first electrode terminal 115 a and the secondelectrode terminal 115 b are formed in some regions of the electrodesubstrate 115. As shown in FIG. 7, each of the first electrode terminal115 a and the second electrode terminal 115 b is formed to penetrate theelectrode substrate 115 from an upper surface thereof to a lower surfacethereof. In addition, each of the first electrode terminal 115 a and thesecond electrode terminal 115 b may have a predetermined width on theupper and lower surfaces of the electrode substrate 115.

The first electrode terminal 115 a and the second electrode terminal 115b may be separated from each other so as to be electrically insulatedfrom each other. In addition, a space between the first electrodeterminal 115 a and the second electrode terminal 115 b exposed on the isupper and lower surfaces of the electrode substrate 115 may be filledwith an insulating material.

The first electrode terminal 115 a contacts a first electrode on theupper surface of the electrode substrate to be electrically connectedthereto and the second electrode terminal 115 b contacts a secondelectrode on the upper surface thereof to be electrically connectedthereto.

The drive substrate 160 is disposed under the light emitting diode part110 and may be electrically connected to the first electrode terminal115 a and the second electrode terminal 115 b exposed on the lowersurface of the light emitting diode part 110. To this end, the drivesubstrate 160 may have an electrode terminal connection portion 162exposed on an upper surface thereof. The drive substrate 160 may includea plurality of electrode terminal connection portions 162, each of whichis electrically connected to the first electrode terminal 115 a and thesecond electrode terminal 115 b. Accordingly, electric power suppliedfrom an external power source can be supplied to the first electrodeterminal 115 a and the second electrode terminal 115 b through theelectrode terminal connection portions 162 and a drive unit 164described below.

FIG. 8 is a cross sectional view of the display apparatus of FIG. 7illustrating a step in a process for coupling light emitting diodemodules of the display apparatus to a drive substrate in an exemplarymethod of manufacturing the display apparatus according to theprinciples of the invention.

Referring to FIG. 8, a plurality of light emitting diode modules M1 toM3 may be coupled to an upper surface of one drive substrate 160. Eachof the light emitting diode modules M1 to M3 is obtained bymodularization of a predetermined number of light emitting diode parts110 as described above with reference to FIG. 7.

That is, each of the plurality of light emitting diode modules M1 to M3may be coupled to the upper surface of the drive substrate 160. As shownin FIG. 8, each of the plurality of light emitting diode modules M1 toM3 is coupled one-by-one to the upper surface of the drive substrate160. A first light emitting diode module M1 is coupled to the uppersurface of the drive substrate 160, a second light emitting diode moduleM2 is coupled thereto to be disposed adjacent to the first lightemitting diode module M1, and a third light emitting diode module M3 isfinally coupled thereto in a like orientation.

The light emitting diode modules M1 to M3 may be coupled to the drivesubstrate 160 by a surface mount technology (SMT) method or using aseparated adhesive material. The light emitting diode modules M1 to M3are coupled to the drive substrate 160 such that the first electrodeterminal 115 a and the second electrode terminal 115 b exposed on thelower surface of each of the light emitting diode modules M1 to M3 areelectrically connected to the electrode terminal connection portions 162of the drive substrate 160.

The drive unit 164 may be disposed at one side of the drive substrate160 and may include the TFT drive circuits as described above. The driveunit 164 is electrically connected to the electrode terminal connectionportion 162 and may control light emission of each of the light emittingdiodes 112 in each of the plurality of light emitting diode modules M1to M3 through electrode terminal connection portions 162.

FIG. 9 is a cross sectional view of a fourth embodiment of a displayapparatus constructed according to the principles of the invention.

Referring to FIG. 9, the display apparatus 100 includes a light emittingdiode part 110 and a drive substrate 160. Descriptions of the samecomponents as those previously described will hereinafter be omitted toavoid redundancy.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, which are regularly arranged on an electrode substrate 115.The light emitting diodes 112 are vertical type light emitting diodes.Each of the light emitting diodes 112 is mounted on a first electrodeterminal 115 a of the electrode substrate 115 and is electricallyconnected to the first electrode terminal 115 a. As previously describedin connection with third exemplary embodiment, the light emitting diode112 includes an n-type semiconductor layer 23 at a lower side thereofand a p-type semiconductor layer 27 at an upper side thereof such thatthe first electrode terminal 115 a is electrically connected to then-type semiconductor layer 23. In addition, the p-type semiconductorlayer 27 is electrically connected to a second electrode terminal 115 bformed on the electrode substrate 115 via a wire W.

Further, here the light emitting diodes 112 include blue light emittingdiodes 112 a, green light emitting diodes 112 b and red light emittingdiodes 112 c, each of which is mounted on the corresponding firstelectrode terminal 115 a. The blue light emitting diodes 112 a emit bluelight, the green light emitting diodes 112 b emit green light, and thered light emitting diodes 112 c emit red light. As shown, the pluralblue light emitting diodes 112 a, the plural green light emitting diodes112 b and the plural red light emitting diodes 112 c are alternatelyarranged to be adjacent to one another.

The electrode substrate 115 has the same structure the third exemplaryembodiment and includes the first electrode terminal 115 a and thesecond electrode terminal 115 b. In this embodiment, since the lightemitting diode 112 is mounted on the first electrode terminal 115 a, thefirst electrode terminal 115 a may have a larger area on the uppersurface of the electrode substrate 115 than the second electrodeterminal 115 b thereon.

Although certain exemplary embodiments have been described herein, itshould is be understood by those skilled in the art that theseembodiments are given by way of illustration only, and that variousmodifications, variations, and alterations can be made without departingfrom the spirit and scope of the invention. Therefore, the scope of theinvention should be limited only by the accompanying claims andequivalents thereof

What is claimed is:
 1. A display apparatus comprising: a panelsubstrate; a TFT panel part comprising a plurality of connectionelectrodes disposed on an upper surface of the panel substrate; and alight emitting diode part disposed on the TFT panel part and comprisinga plurality of light emitting modules adjacent to each other, wherein:each of the light emitting modules comprises a plurality of pixels; eachof the pixels includes three sub-pixels; and the three sub-pixelscomprise blue light emitting diodes, green light emitting diodes, andred light emitting diodes.
 2. The display apparatus of claim 1, whereinthe TFT panel part further comprises a TFT drive circuit.
 3. The displayapparatus of claim 2, wherein the TFT drive circuit is configured todrive the pixels in an active matrix.
 4. The display apparatus of claim2, wherein the TFT drive circuit is configured to drive the pixels in apassive matrix.
 5. The display apparatus of claim 1, further comprisingan isotropic conductive film between the TFT panel part and the lightemitting diode part.
 6. The display apparatus of claim 5, wherein theisotropic conductive film comprises an adhesive organic insulationmaterial and conductive particles dispersed therein.
 7. The displayapparatus of claim 6, wherein: the panel substrate longitudinallyextends along a first direction; and the isotropic conductive film hasconductivity in a second direction crossing the first direction andinsulation property in the first direction.
 8. The display apparatus ofclaim 1, further comprising a support substrate on which the blue lightemitting diodes, the green light emitting diodes, and the red lightemitting diodes are regularly arranged.
 9. The display apparatus ofclaim 8, wherein the support substrate includes at least one of asapphire substrate, a gallium nitride substrate, a glass substrate, asilicon carbide substrate, a silicon substrate, a metal substrate, and aceramic substrate.
 10. The display apparatus of claim 8, wherein thesupport substrate is flexible.
 11. The display apparatus of claim 8,wherein the support substrate comprises a plurality of conductivepatterns on an upper surface thereof to be electrically connected to thelight emitting diodes.
 12. The display apparatus of claim 8, wherein theblue light emitting diodes, the green light emitting diodes, and the redlight emitting diodes are arranged at constant intervals in a matrix.13. The display apparatus of claim 1, further comprising an electrodesubstrate on which the light emitting diodes are formed.
 14. The displayapparatus of claim 13, wherein the electrode substrate comprises a firstelectrode terminal and a second electrode terminal.
 15. The displayapparatus of claim 14, wherein each of the first electrode terminal andthe second electrode terminal penetrates through the electrodesubstrate.
 16. The display apparatus of claim 15, wherein each of thefirst electrode terminal and the second electrode terminal has apredetermined width on upper and lower surfaces of the electrodesubstrate.
 17. The display apparatus of claim 8, wherein the lightemitting diode part further comprises an insulation layer surroundingeach of the light emitting diodes.
 18. The display apparatus of claim17, wherein the light emitting diode part further comprises a blockingpart on the support substrate.
 19. The display apparatus of claim 18,wherein the insulation layer partially covers the blocking part.
 20. Thedisplay apparatus of claim 8, wherein the blue light emitting diodes,the green light emitting diodes, and the red light emitting diodes arearranged at side by side on the same axis.